Author/Authors :
Vasilyev، نويسنده , , Yu.B and Solovʹev، نويسنده , , V.A and Melʹtser، نويسنده , , Ya. S. Semenov and V. P. Larionov ، نويسنده , , A.N and Baidakova، نويسنده , , M.V and Ivanov، نويسنده , , S.V and Kopʹev، نويسنده , , P.S and Mendez، نويسنده , , E.E and Lin، نويسنده , , Y، نويسنده ,
Abstract :
We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current–voltage characteristics of devices based on InAs/AlxGa1−xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T=77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.
