Title of article :
Characterization of aluminium concentration in shallow quantum wells AlxGa1−xAs/GaAs types
Author/Authors :
Chaouache، نويسنده , , M and Chtourou، نويسنده , , R and Charfi، نويسنده , , F.F and Yves Marzin، نويسنده , , J and Bloch، نويسنده , , J، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
We report a reflectance study on series of shallow quantum wells GaAs/AlxGa1−xAs types with different aluminium concentration. The observed barrier exciton reflectance line shape depends strongly on the shift in aluminium concentration in the two barriers, with the appropriate choice of the cap layer thickness. This observation was based on the reflectivity line shape analysis of anti-Bragg structures.
Keywords :
A. Quantum wells , D. Optical properties , A. Semiconductors , E. Light absorption and reflection
Journal title :
Solid State Communications
Journal title :
Solid State Communications
