Title of article :
Epitaxial GaN films deposited on sapphire substrates prepared by the sol–gel method
Author/Authors :
Sardar، نويسنده , , Kripasindhu and Raju، نويسنده , , A.R. and Subbanna، نويسنده , , G.N.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
Thin films of GaN have been successfully deposited on Al2O3 (0001) substrates by the sol–gel technique. The method, in addition to being is simple and cost-effective, results in epitaxial films. The films have been characterized by photoluminescence spectroscopy.
Keywords :
A. Thin films , B. Chemical synthesis , A. Semiconductors , E. Luminescence
Journal title :
Solid State Communications
Journal title :
Solid State Communications
