Title of article
Photoemission study of CaF2 on Si(001)-2×1 during annealing
Author/Authors
Pi، نويسنده , , T.-W. and Tien، نويسنده , , L.-C. and Wen، نويسنده , , J.-F. and Ouyang، نويسنده , , C.-P. and Cheng، نويسنده , , C.-P. and Hwang، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
459
To page
462
Abstract
We have employed synchrotron radiation photoemission to investigate calcium fluoride deposited on Si(001)-2×1 annealed at 700 °C. The valence band spectra reveal that the initial molecules are dissociated to single Ca atoms resting on the surface. Si 2p core-level spectra manifest a negatively shifted Ca-induced line at 0.35 eV. The dissociated Ca atoms occupy only half of the surface, on top of which the CaF2 molecules commence growth. This is in contrast to the Si(111)-7×7 counterpart, which exhibits a CaF layer in the interface. Strong elastic scattering due to the absorbed Ca atoms is evident in the photoemission spectra, thus averaging out the angle-dependent features.
Keywords
A. Surfaces and interfaces , A. Semiconductors , E. Synchrotron radiation
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1787788
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