Title of article :
Photoemission study of CaF2 on Si(001)-2×1 during annealing
Author/Authors :
Pi، نويسنده , , T.-W. and Tien، نويسنده , , L.-C. and Wen، نويسنده , , J.-F. and Ouyang، نويسنده , , C.-P. and Cheng، نويسنده , , C.-P. and Hwang، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
459
To page :
462
Abstract :
We have employed synchrotron radiation photoemission to investigate calcium fluoride deposited on Si(001)-2×1 annealed at 700 °C. The valence band spectra reveal that the initial molecules are dissociated to single Ca atoms resting on the surface. Si 2p core-level spectra manifest a negatively shifted Ca-induced line at 0.35 eV. The dissociated Ca atoms occupy only half of the surface, on top of which the CaF2 molecules commence growth. This is in contrast to the Si(111)-7×7 counterpart, which exhibits a CaF layer in the interface. Strong elastic scattering due to the absorbed Ca atoms is evident in the photoemission spectra, thus averaging out the angle-dependent features.
Keywords :
A. Surfaces and interfaces , A. Semiconductors , E. Synchrotron radiation
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1787788
Link To Document :
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