• Title of article

    Photoemission study of CaF2 on Si(001)-2×1 during annealing

  • Author/Authors

    Pi، نويسنده , , T.-W. and Tien، نويسنده , , L.-C. and Wen، نويسنده , , J.-F. and Ouyang، نويسنده , , C.-P. and Cheng، نويسنده , , C.-P. and Hwang، نويسنده , , J.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    459
  • To page
    462
  • Abstract
    We have employed synchrotron radiation photoemission to investigate calcium fluoride deposited on Si(001)-2×1 annealed at 700 °C. The valence band spectra reveal that the initial molecules are dissociated to single Ca atoms resting on the surface. Si 2p core-level spectra manifest a negatively shifted Ca-induced line at 0.35 eV. The dissociated Ca atoms occupy only half of the surface, on top of which the CaF2 molecules commence growth. This is in contrast to the Si(111)-7×7 counterpart, which exhibits a CaF layer in the interface. Strong elastic scattering due to the absorbed Ca atoms is evident in the photoemission spectra, thus averaging out the angle-dependent features.
  • Keywords
    A. Surfaces and interfaces , A. Semiconductors , E. Synchrotron radiation
  • Journal title
    Solid State Communications
  • Serial Year
    2003
  • Journal title
    Solid State Communications
  • Record number

    1787788