A Monte Carlo simulation study of boron profiles as-implanted into LPCVD–NiDoS polycrystalline thin films

This work presents a Monte Carlo simulation study of boron profiles obtained from as-implanted ions into thin films nitrogen doped silicon (NiDoS) thin films. These films are performed by LPCVD technique from Si2H6 and NH3 gas sources, four values deliberately chosen, of the ratio NH3/Si2H6 to obtain samples, differently in situ nitrogen-doped. Taking into account the effect of the codoping case, and the structure specificity of these films, an accurate Monte Carlo model based on binary collisions in a multi-atomic target was performed. Nitrogen atoms present in the target is shown to affect the boron profiles and confirms clearly a reduction penetration effect which becomes more significant at high nitrogen concentrations. Whereas, the fine-grained polysilicon structure, and thus the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon by assuming an effective role played by GBʹs in the scattering calculation process of the incident ions. This role is represented by the change in direction of the incident ion after interaction with GB without corresponding loss in its energy. sults obtained show an enhancement of the stopping parameter when nitrogen concentration increases, while the GB interaction remains very important. This behavior is due to a great number of GBʹs interactions with boron atoms which gave low deflection angles. So that, the average positions described by the sequences of trajectories took place farther than what expected with channeling effect in crystal silicon materials.