Title of article
Atomic and electronic structure of (3×3)R 30°-In phase on Cu(111)
Author/Authors
Wang، نويسنده , , P. and Gao، نويسنده , , X. and Xun، نويسنده , , K. and Jia، نويسنده , , J.F. and Qian، نويسنده , , H.J. and Liu، نويسنده , , F.Q. and Ibrahim، نويسنده , , K. and Zhou، نويسنده , , Y.M. and Xue، نويسنده , , Q.K. and Wu، نويسنده , , S.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
509
To page
514
Abstract
The atomic and electronic structure of (3×3)R 30°-In phase on Cu(111) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (3×3)R 30° phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands.
Keywords
A. Thin film growth , C. Surface topography , D. Band structure
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1787811
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