Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5×1015 to 2.5×1015 cm−3, which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) method. New traps, e1, e2, e3, e4 and e5, with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46 eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e1 and e5 produced by the irradiation with electron doses above 1×1015 cm−2 were linked to InP and PIn antisite defects, respectively, that probably form complexes. Traps e3 and e4 produced by the irradiation with doses above 1×1014 cm−2 were associated with In and P vacancy related defects, respectively.