Author/Authors :
Lee، نويسنده , , Y.M. and Shin، نويسنده , , H.J. and Choi، نويسنده , , S.J. and Oh، نويسنده , , J.H. and Jeong، نويسنده , , H.S. and Kim، نويسنده , , K. and Jung، نويسنده , , M.-C.، نويسنده ,
Abstract :
Chemical states of N-doped GeTe (N: 8.4 at.%) thin film (NGT) in structural phase transition were investigated by near-edge x-ray absorption of fine structure and high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. We found the NaCl-like structure in NGT by x-ray diffraction at around 300 °C. Preparatory to the analysis of chemical states, after mild Ne+ sputtering we obtained clean amorphous NGT, which showed the N2 vibration mode peak in the N K-edge absorption spectrum. After annealing, the N2 molecular peak disappeared completely and we assumed that nitrogen was contributed only to the Ge atom in structural phase transition by analyzing Ge 3d and Te 4d core-levels.
Keywords :
N-doped GeTe , Chemical state , Structural phase transition , NEXAFS , XPS
