Title of article :
Electronic properties of single-walled V2O5 nanotubes
Author/Authors :
Ivanovskaya، نويسنده , , V.V and Enyashin، نويسنده , , A.N and Sofronov، نويسنده , , A.A and Makurin، نويسنده , , Yu.N and Medvedeva، نويسنده , , N.I. and Ivanovskii، نويسنده , , A.L، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
489
To page :
493
Abstract :
Atomistic models of quasi-one-dimensional vanadium pentoxide nanostructures—single-walled nanotubes formed by rolling (010) layers of V2O5 are constructed and their electronic properties and bond indices are studied using the tight-binding band method. We show that all zigzag (n,0)- and armchair (n,n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. The V–O covalent bonds were found to be the strongest interactions in V2O5 tubes, whereas V–V bonds proved to be much weaker.
Keywords :
A. Vanadium pentoxide nanotubes , D. Electronic band structure
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1788003
Link To Document :
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