Title of article :
GaSe formation by mechanical alloying Ga50Se50 mixture
Author/Authors :
Campos، نويسنده , , C.E.M. and de Lima، نويسنده , , J.C. and Grandi، نويسنده , , Be?ta and Machado، نويسنده , , K.D. and Pizani، نويسنده , , P.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
611
To page :
615
Abstract :
Alloying of Ga with Se is observed in elemental Ga:Se=50:50 mixture upon high-energy ball milling. X-ray diffraction of samples milled in the 1/2<t<3 h range displays evidence of hexagonal gallium selenide (GaSe). At longer milling times t>10 h two wide bands are superimposed on the crystalline pattern, indicating that the main milling product at longer t is an amorphous phase. Differential scanning calorimetry shows that the amorphous phase is a Ga–Se phase and that it grows in concentration with t. Raman scattering provides modes of both amorphous and crystalline GaSe phases.
Keywords :
B. Mechanical alloying , C. Differential scanning calorimetry (DSC) , E. Raman spectroscopy , A. Nanocrystalline materials , A. Semiconductors , D. X-ray diffraction (XRD)
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1788056
Link To Document :
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