Author/Authors :
Park، نويسنده , , Jongho and Kim، نويسنده , , Chung-Sik and Bae، نويسنده , , Jong-Seng and Choi، نويسنده , , Byung-Chun and Jeong، نويسنده , , Jung-Hyun and Moon، نويسنده , , Byung Kee and Seo، نويسنده , , Hyo-Jin and Kim، نويسنده , , Ill Won and Kim، نويسنده , , Jin-Soo، نويسنده ,
Abstract :
Ferroelectrics SrBi2Ta2O9 (SBTO) thin films were grown on a highly oriented Pt/Ti/SiO2/Si substrates using the pulsed laser ablation. The ac impedance of SBTO thin films have been measured at room temperature both in the frequency range from 10−1 to 106 Hz and bias voltage range from −6 to 6 V. The ac impedance dispersion was observed at low frequency with increasing bias voltage, which was interpreted based on a blocked charge. We can explain that the blocking interface gives rise to constant phase element (CPE) response, and we give an impedance model function that can fit data along the low frequency range when such a CPE is found. The low frequency dispersion phenomena of SBTO thin film are related to a charge diffusion process at the surface of thin film.
