• Title of article

    Electronic topological transition in metastable Al–Ge solid solutions

  • Author/Authors

    Mikhaylushkin، نويسنده , , A.S. and Isaev، نويسنده , , E.I. and Vekilov، نويسنده , , Yu.Kh. and Simak، نويسنده , , S.I. and Livanov، نويسنده , , D.V.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    253
  • To page
    256
  • Abstract
    Al-rich Al–Ge solid solutions synthesized under high pressure demonstrate physical properties strikingly different from those of pure Al. In particular, enhanced superconductivity temperature (Tc), anomalies in the phonon spectra and decrease of the Debye temperature have been observed. We show from first-principles, based on calculations of the electronic spectra and Fermi surfaces of Al–Ge substitutional solid solutions, that an electronic topological transition (ETT) takes place in the system. We predict anomalies in transport properties to be revealed experimentally for Al–Ge solid solutions with the Ge concentration ≈10 at.%. The influence of the ETT on the thermodynamic properties of the system is discussed and, in particular, concentration dependence of the Debye temperature is reproduced in good agreement with experiment.
  • Keywords
    D. Fermi surface , A. Al–Ge , D. Electronic Topological Transitions (ETT)
  • Journal title
    Solid State Communications
  • Serial Year
    2003
  • Journal title
    Solid State Communications
  • Record number

    1788175