Author/Authors :
Tamura، نويسنده , , K. and Makino، نويسنده , , T. and Tsukazaki، نويسنده , , A. and Sumiya، نويسنده , , M. and Fuke، نويسنده , , S. and Furumochi، نويسنده , , T. and Lippmaa، نويسنده , , M. and Chia، نويسنده , , C.H. and Segawa، نويسنده , , Y. and Koinuma، نويسنده , , H. and Kawasaki، نويسنده , , M.، نويسنده ,
Abstract :
We have grown nitrogen-doped ZnO (ZnO:N) films by laser molecular-beam epitaxy. The use of lattice-matched ScAlMgO4 substrates prevented the degradation of crystallinity induced by the nitrogen incorporation to the films. Despite this improvement, we have not obtained ZnO:N films which showed p-type conductivity. We studied the optical properties of these ZnO:N films. Donor–acceptor pair (DAP) luminescence was observed. The results indicate the formation of an acceptor state. The energy position of the DAP luminescence is lower than that reported by Look et al. [Appl. Phys. Lett. 81 (2002) 1830]. The DAP luminescence band shifts to lower energy with increasing nitrogen concentration. A photoluminescence recombination possibly due to the free-electron-to-acceptor (FA) transition was observed at temperatures higher than 40 K. The acceptor ionization energy was estimated from the energy position of the FA luminescence to be 266 meV.
Keywords :
A. Semiconductors , C. Impurities in semiconductors , D. Optical properties , E. Luminescence
