Electroluminescence enhancement of semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

( 11 2 ¯ 2 ) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from −1° to +1°. While the coexistence of ( 11 2 ¯ 2 ) surface and inclined { 10 1 ¯ 1 } surfaces was observed on GaN films on the on-axis m-plane sapphire substrates, { 10 1 ¯ 1 } surfaces were dominant on the GaN films on the +1° miscut sapphire substrates. As the miscut angle was changed from −1° to +1°, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.