Author/Authors :
Bauer، نويسنده , , Matthew R. and Tolle، نويسنده , , John and Bungay، نويسنده , , Corey and Chizmeshya، نويسنده , , Andrew V.G. and Smith، نويسنده , , David J. and Menéndez، نويسنده , , José and Kouvetakis، نويسنده , , John، نويسنده ,
Abstract :
Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1−x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x=0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E0 is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.
