Author/Authors :
Wu، نويسنده , , J and Walukiewicz، نويسنده , , W and Yu، نويسنده , , K.M and Ager III، نويسنده , , J.W. and Li، نويسنده , , S.X and Haller، نويسنده , , E.E and Lu، نويسنده , , Hai and Schaff، نويسنده , , William J، نويسنده ,
Abstract :
The energy gaps of molecular-beam-epitaxy grown wurtzite-structure In1−xAlxN alloys with x≤0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of ∼0.7 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and GaAlN, these results show a universal relationship between the bandgap variations of group-III nitride alloys and their compositions.
