Title of article
Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2
Author/Authors
Aliyev، نويسنده , , V.P and Babayev، نويسنده , , S.S and Mammadov، نويسنده , , T.G and Seyidov، نويسنده , , Mir-Hasan Yu and Suleymanov، نويسنده , , R.A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
25
To page
28
Abstract
The paper is devoted to the investigations of the non-equilibrium properties of the incommensurate (INC) phase of the improper ferroelectric-semiconductor TlGaSe2. The influence of the prehistory of the heat treating of the crystal, i.e. annealing at a fixed, stabilized temperature in the region of INC-phase on the dielectric constant (ε) in the vicinity of the phase transition (PT)-INC phase (the commensurate (C) ferroelectric phase) was studied. The peculiar case of the memory effect leading to the temperature range change of the INC-phase existence is observed for the first time in TlGaSe2.
Keywords
A. Ferroelectrics , D. Phase transition , D. Incommensurate
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1788366
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