Dependence of the heavy-hole exciton reduced mass on quantum-well size in InGaAs/GaAs heterostructures

We present low temperature photoluminescence investigations of the exciton ground state of In0.14Ga0.86As/GaAs quantum wells (QW) in the presence of pulsed magnetic fields up to 50 T. The exciton in-plane reduced mass and the heavy-hole in-plane mass are determined from the best fit of theoretical calculations to the magnetic field dependence of PL peaks. When the QW thickness decreases, their masses increases due to valence-band mixing effect.