Title of article :
Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
Author/Authors :
Belʹkov، نويسنده , , V.V. and Ganichev، نويسنده , , S.D. and Schneider، نويسنده , , Petra and Back، نويسنده , , C. and Oestreich، نويسنده , , M. and Rudolph، نويسنده , , J. and Hنgele، نويسنده , , D. and Golub، نويسنده , , L.E. and Wegscheider، نويسنده , , W. and Prettl، نويسنده , , W.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
283
To page :
286
Abstract :
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.
Keywords :
D. Spin-orbit effects , A. Quantum wells
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1788415
Link To Document :
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