Title of article
Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
Author/Authors
Belʹkov، نويسنده , , V.V. and Ganichev، نويسنده , , S.D. and Schneider، نويسنده , , Petra and Back، نويسنده , , C. and Oestreich، نويسنده , , M. and Rudolph، نويسنده , , J. and Hنgele، نويسنده , , D. and Golub، نويسنده , , L.E. and Wegscheider، نويسنده , , W. and Prettl، نويسنده , , W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
283
To page
286
Abstract
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.
Keywords
D. Spin-orbit effects , A. Quantum wells
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1788415
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