Title of article :
Free-standing tetracene single crystal field effect transistor
Author/Authors :
Butko، نويسنده , , V.Y. and Chi، نويسنده , , X. and Ramirez، نويسنده , , A.P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
We have fabricated and studied field effect transistors (FETs) on the optically transparent free-standing organic single crystals of tetracene. These FETs exhibit effective hole channel mobility μeff up to 0.15 cm2/Vs and on–off ratios up to 2×107. Using measured values of μeff, thermal activation energy, and a simple model, we deduce an intrinsic free carrier mobility in the range of tens of cm2/Vs, similar to that found in pentacene crystals. These values should be considered only as a rough indication of achievable mobilities in samples much purer than those presently studied. The obtained results show the possibility of FET behavior in transparent crystals with low intrinsic carrier density.
Keywords :
A. Organic crystals , A. Semiconductors , B. Crystal growth , D. Electronic transport , D. Recombination and trapping
Journal title :
Solid State Communications
Journal title :
Solid State Communications