Title of article :
Synthesis and magnetic properties of Zn1−xMnxO films prepared by the sol–gel method
Author/Authors :
Kim، نويسنده , , Y.M. and Yoon، نويسنده , , M. and Park، نويسنده , , I.-W. and Park، نويسنده , , Y.J. and Lyou، نويسنده , , Jong H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
175
To page :
178
Abstract :
We report on the ferromagnetic characteristics of Zn1−xMnxO films (x=0.1–0.3) prepared by the sol–gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (TC) and the coercive field (HC) were ∼39 K and ∼2100 Oe for the film of x=0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn0.8Mn0.2O film showing the ratio, Zn:Mn:O≅1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film.
Keywords :
A. ZnO , A. Diluted magnetic semiconductor , A. Manganese oxide , C. energy dispersive spectroscopy , B. Sol–gel
Journal title :
Solid State Communications
Serial Year :
2004
Journal title :
Solid State Communications
Record number :
1788542
Link To Document :
بازگشت