Author/Authors :
Takata، نويسنده , , Keiji and Tamura، نويسنده , , Ryota and Kasama، نويسنده , , Toshihiro and Fukuyama، نويسنده , , Masataka and Yokoyama، نويسنده , , Shin-ichiro Kajiyama، نويسنده , , Hiroshi، نويسنده ,
Abstract :
Strain imaging of electrochemical behavior of a solid electrolyte Cu2S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu2S and located the Cu bridges causing switching.
Keywords :
copper sulfide , Resistance random access memory , solid electrolyte , Scanning probe microscopy
