Title of article :
Barrier height and negative tunnel magnetoresistance
Author/Authors :
Liang، نويسنده , , Xue-Fei and Yang، نويسنده , , Wei، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
459
To page :
463
Abstract :
Based on the free-electron approximation method proposed by Slonczewski, we substitute the finite magnetic zone by a semi-infinite magnet. On this basis, the relationship between the tunnel magnetoresistance (TMR) and the barrier height of magnetic tunnel junction (MTJ) is studied. We find the TMR at small bias is always positive for various barrier heights when the MTJ has a symmetric configuration and the negative TMR can be observed when MTJ is with lower barrier height in the asymmetric condition.
Keywords :
A. Magnetic films and multilayers , D. Tunneling
Journal title :
Solid State Communications
Serial Year :
2004
Journal title :
Solid State Communications
Record number :
1788638
Link To Document :
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