Author/Authors :
Cho، نويسنده , , Sunglae and Choi، نويسنده , , Sungyoul and Cha، نويسنده , , Gi-Beom and Hong، نويسنده , , Soon Cheol and Kim، نويسنده , , Yunki and Freeman، نويسنده , , Arthur J. and Ketterson، نويسنده , , John B. and Park، نويسنده , , Yongsup and Park، نويسنده , , Hyun-Min، نويسنده ,
Abstract :
We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06 eV, respectively. Both compounds exhibit room-temperature ferromagnetism with TC∼320 and 340 K for MnGeP2 and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers.
