Properties of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi4−x/3Ti4−xVxO15 (SBTV-x) were synthesized. The vanadium doping content, x, ranges from 0.000 to 0.06. The crystal structure of SrBi4Ti4O15 is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2Pr). The 2Pr of STBV-0.03 reaches a very large value, which is over 50 μC/cm2 and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi4Ti4O15. V-doping can improve the electric properties of SrBi4Ti4O15 without sacrificing its thermal stableness.