Title of article :
Structural investigations of GeS2–Ga2S3–CdS chalcogenide glasses using Raman spectroscopy
Author/Authors :
Wang، نويسنده , , X.F. and Gu، نويسنده , , S.X. and Yu، نويسنده , , J.G. and Zhao، نويسنده , , X.J. and Tao، نويسنده , , H.Z.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
459
To page :
464
Abstract :
Raman investigations were carried out for various compositions of chalcogenide glasses in the GeS2–Ga2S3–CdS system. Addition of Ga2S3 into GeS2 results in the formation of metal–metal bonds and edge-shared GaS4/2 tetrahedra. Ge2+ ions may surround [GaS4/2]1− tetrahedra acting as charge compensators. Upon the addition of CdS into the GeS2–Ga2S3 system, the number of the metal–metal bonds and edge-shared GaS4/2 tetrahedra decreases, resulting in the formation of corner-shared tetrahedra with non-bridging sulfurs (NBS). Cd2+ ions can be dissolved into the glass network as charge compensators for these NBS and exited few [GaS4/2]1− tetrahedra. The high solubility of CdS is ascribed to the dissociation of metal–metal bonds and edge-shared tetrahedra in these Ga-containing glasses.
Keywords :
A. Glasses , D. Microstructure , A. Disordered systems , C. Raman spectroscopy
Journal title :
Solid State Communications
Serial Year :
2004
Journal title :
Solid State Communications
Record number :
1788852
Link To Document :
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