Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature

Thin films of antimony doped tin oxide (SnO2:Sb) were prepared by spray pyrolysis technique using SnCl2 as precursor with the various antimony doping levels ranging from 1 to 4 wt%. The XRD analysis showed that the undoped SnO2 films grow in (211) preferred orientation whereas the Sb doped films grow in (200) plane. Scanning electron microscopy studies indicated that the surface of the films prepared with lower doping level (1 wt%) consists of larger grains whereas those prepared with higher doping levels (>1 wt%) consist of smaller grains. The sheet resistance has been found to be reduced considerably (2.17 Ω/□) for Sb doped films. To the best of our knowledge this is the lowest sheet resistance obtained for Sb doped SnO2 thin films.