Title of article
Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots
Author/Authors
Jin، نويسنده , , Hua and Zhang، نويسنده , , Li-Gong and Zheng، نويسنده , , Zhu-Hong and Kong، نويسنده , , Xiang-Gui and Shen، نويسنده , , De-Zhen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
3
From page
653
To page
655
Abstract
Exciton tunnelling through a ZnSe barrier layer of various thicknesses is investigated in a Zn0.72Cd0.28Se/CdSe coupled quantum well/quantum dots (QW/QDs) structure using photoluminescence (PL) spectra and near resonant pump-probe technique. Fast exciton tunnelling from quantum well to quantum dots is observed by transient differential transmission. The tunnelling time is 1.8, 4.4 and 39 ps for barrier thickness of 10, 15 and 20 nm, respectively.
Keywords
A. Quantum wells , A. Quantum dots , D. Tunnelling , E. Luminescence
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1788929
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