Author/Authors :
Jeong، نويسنده , , Yonkil and Hirade، نويسنده , , Masato and Kokawa، نويسنده , , Ryohei and Yamada، نويسنده , , Hirofumi and Kobayashi، نويسنده , , Kei and Oyabu، نويسنده , , Noriaki and Arai، نويسنده , , Toyoko and Sasahara، نويسنده , , Akira and Tomitori، نويسنده , , Masahiko، نويسنده ,
Abstract :
Local interaction imaging of cleaved InAs surface (110) using a high aspect ratio (HAR) SiGe quantum dot (QD) probe was demonstrated by frequency-modulation mode noncontact atomic force microscopy under atmospheric pressure. The local contrast image with pronounced brightness is mainly attributed to no contact potential difference between the HAR SiGe-QD probe apex and the sample surface, and low frequency-change of the HAR SiGe-QD probe.
Keywords :
FM nc-AFM , Quantum dot , contact potential difference , InAs , High Aspect ratio
