Title of article
Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films
Author/Authors
Du، نويسنده , , Samuel Y.L. and Chen، نويسنده , , G and Zhang، نويسنده , , M.S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
313
To page
317
Abstract
Polycrystalline Bi4Ti3O12 thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473–573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm−1 and appearance of a new Raman band at 151 cm−1. The two broad Raman bands centered at the 57 and 93 cm−1 at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi4Ti3O12 thin films.
Keywords
A. Thin films , B. Laser processing , D. Phase transitions , D. phonons
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789076
Link To Document