Title of article :
The effect of titanium diboride addition on the thermoelectric properties of β-FeSi2 semiconductors
Author/Authors :
Cai، نويسنده , , K.F. and Mueller، نويسنده , , E. and Drasar، نويسنده , , C. and Stiewe، نويسنده , , C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
β-FeSi2–TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650 K. The influence of an additional phase, ε-FeSi, formed during the hot pressing, on the thermoelectric properties of the β-FeSi2–TiB2 composites was also discussed.
Keywords :
D. Electronic transport , D. Thermoelectric properties , A. Semiconductors
Journal title :
Solid State Communications
Journal title :
Solid State Communications