Title of article
Investigation of electronic and optical properties in Al−Ga codoped ZnO thin films
Author/Authors
Lee، نويسنده , , Woojin and Shin، نويسنده , , Sungjin and Jung، نويسنده , , Dae-Ryong and Kim، نويسنده , , Jongmin and Nahm، نويسنده , , Changwoo and Moon، نويسنده , , Taeho and Park، نويسنده , , Byungwoo، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2012
Pages
4
From page
628
To page
631
Abstract
Electronic and optical properties of Al−Ga codoped ZnO thin films were investigated by post-annealing. The lowest resistivity of the Al–Ga codoped ZnO films was observed from the 450 °C-annealed sample. The Fermi-level shift of the Al−Ga codoped ZnO film was ∼0.6 eV from x-ray photoelectron spectroscopy, and the widening of optical-bandgap in the Al−Ga codoped ZnO film was ∼0.3 eV. The correlations of optical-bandgap with Fermi-level shift and conduction band filling were suggested by schematic band diagrams.
Keywords
transparent conducting oxide , Optical-bandgap , Al–Ga codoped ZnO , Fermi-level shift
Journal title
Current Applied Physics
Serial Year
2012
Journal title
Current Applied Physics
Record number
1789093
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