Author/Authors :
Lee، نويسنده , , Ki-Hong and Lofton، نويسنده , , Charles and Kim، نويسنده , , Kwanghoon and Seo، نويسنده , , Won-Seon and Lee، نويسنده , , Youngho and Lee، نويسنده , , Myung-Hyun and Sigmund، نويسنده , , Wolfgang، نويسنده ,
Abstract :
Photoluminescence characteristics of amorphous silica nanowires (a-SiONWs) grown on TiN/Ni/Si and TiN/Ni/SiO2 substrates have been studied. A-SiONWs grown on TiN/Ni/Si substrates show a Si-rich composition compared to those grown from TiN/Ni/SiO2/Si. The emission characteristics of the nanowires were found to depend on the type of substrate. By annealing the a-SiONWs grown on TiN/Ni/Si in air, emission bands shift from blue to green bands. It is likely that silicon to oxygen ratio is an important factor in deciding the types of defects and emission bands of amorphous silica nanowires.
