Author/Authors :
Mei، نويسنده , , Jiaxin and Rui، نويسنده , , Yunjun and Ma، نويسنده , , Zhongyuan and Xu، نويسنده , , Jun and Zhu، نويسنده , , Da and Yang، نويسنده , , Ling and Li، نويسنده , , Xin and Li، نويسنده , , Wei and Huang، نويسنده , , Xinfan and Chen، نويسنده , , Kunji، نويسنده ,
Abstract :
a-Si:H/SiO2 multilayers have been prepared by alternating changing plasma enhanced chemical vapor deposition of a-Si:H layers and in situ plasma oxidation process. A series of step by step thermal annealing from 350 to 1100 °C were employed as the post treating procedure. Fourier Transform Infrared (FTIR) and photoluminescence (PL) spectra were measured as a function of annealing temperature. A broad red photoluminescence band ranged from 550–720 nm arises as the annealing temperature increases and vanishes after annealing above 650 °C. A strong luminescence peak at 750 nm is observed for annealing temperature above 950 °C. It is suggested that various luminescence centers contribute to the PL bands simultaneously, which can be related to the different bonding configurations of H and O during the annealing process.
