Title of article :
Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells
Author/Authors :
?epkowski، نويسنده , , S.P. and Majewski، نويسنده , , J.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
763
To page :
767
Abstract :
We have studied the influence of nonlinear elastic effects on the pressure coefficients of light emission, dEE/dP, in cubic InGaN/GaN quantum wells. By means of ab-initio calculations, we have determined the pressure dependences of the elastic constants, C11, C12 and C44 in zinc-blende InN and GaN. Further, we show that the pressure dependence of the elastic constants results in significant reduction of dEE/dP in cubic InGaN/GaN quantum wells and essentially improves the agreement between experimental and theoretical values.
Keywords :
D. Optical properties , D. Elasticity , A. Quantum wells , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2004
Journal title :
Solid State Communications
Record number :
1789209
Link To Document :
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