Author/Authors :
Zong، نويسنده , , Fujian and Ma، نويسنده , , Honglei and Xue، نويسنده , , Chengshan and Zhuang، نويسنده , , Huizhao and Zhang، نويسنده , , Xijian and Xiao، نويسنده , , Hongdi and Ma، نويسنده , , Jin and Ji، نويسنده , , Feng، نويسنده ,
Abstract :
This paper reports that Zn3N2 powder of high quality has been synthesized by a nitridation reaction of Zn powder with NH3 gas (flow rate 500 ml/min) at the nitridation temperature of 600 °C for 120 min. X-ray diffraction indicates that Zn3N2 is cubic in structure with the lattice constant being a=9.788 Å. X-ray photoelectron spectroscopy shows the differences of chemical bonding states between Zn3N2 and ZnO, and confirms the formation of N–Zn bonds. Thermal gravimetric analysis and differential thermal analysis are employed to investigate the thermal decomposition behavior of Zn3N2 powder. It is found that Zn3N2 is unstable when exposed to open air above 500 °C.
Keywords :
A. Semiconductor Zn3N2 powders , B. Nitridation method synthesis , C. Crystal structure and symmetry , D. Thermal stability
