Title of article :
High pressure X-ray diffraction and electrical resistance study of the quasi-one-dimensional sulfide InV6S8
Author/Authors :
Garg، نويسنده , , Alka B. and Vijayakumar، نويسنده , , V. and Godwal، نويسنده , , B.K. and Ohtani، نويسنده , , T. and Martin، نويسنده , , B.R. and Hochheimer، نويسنده , , H.D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
731
To page :
736
Abstract :
The ambient structural details and the results of room temperature high pressure angle dispersive X-ray diffraction and electrical resistance measurements on the quasi-one-dimensional sulfide, InV6S8, to a pressure of 25 GPa are reported. The material does not undergo a phase transition in this pressure range, though an anomaly in the c/a ratio has been observed around 10 Gpa. A fit of the Murnaghan equation of state to the V/V0 versus pressure data, with the value of the derivative of B0 with respect to pressure, B′0, fixed at 4 has yielded a value of the bulk modulus, B0, of 110 GPa. We also present data of the pressure dependence of the lattice constants, a and c, the ratio c/a, and the resistance at room temperature.
Keywords :
C. High pressure , D. Electrical conductivity , A. Inorganic compounds , C. X-ray diffraction
Journal title :
Solid State Communications
Serial Year :
2004
Journal title :
Solid State Communications
Record number :
1789433
Link To Document :
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