Title of article :
Field emission behavior of cuboid zinc oxide nanorods on zinc-filled porous silicon
Author/Authors :
Yu، نويسنده , , Ke and Zhang، نويسنده , , Yongsheng and Xu، نويسنده , , Rongli and Jiang، نويسنده , , Desheng and Luo، نويسنده , , Laiqiang and Li، نويسنده , , Qiong and Zhu، نويسنده , , Ziqiang and Lu، نويسنده , , Wei، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
43
To page :
47
Abstract :
Single-crystalline zinc oxide (ZnO) nanorods with cuboid morphology have been prepared on the zinc-filled porous silicon substrate using a vapor phase transport method. Field-emission measurements showed that the turn-on field and threshold field of the cuboid ZnO nanorods film were about 3.2 and 8.2 V/μm respectively. From the emitter surface, a homogeneous emission image was observed with emission site density (ESD) of ∼104 cm−2. The better emission uniformity and the high ESD may be attributed to a large number of ZnO nanocrystallites as emitter on the surface of the nanorod end contributing to emission.
Keywords :
A. Zinc oxide nanorods , A. Porous silicon , E. Field emission
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1789499
Link To Document :
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