• Title of article

    Theoretical investigation of the reflectivity of fullerene-(C60, C70)/AlN multilayers in UV region

  • Author/Authors

    Bingshe، نويسنده , , Xu and Peide، نويسنده , , Han and Jian، نويسنده , , Liang and Xuguang، نويسنده , , Liu and Huiqiang، نويسنده , , Bao and Tianbao، نويسنده , , Li and Mingwei، نويسنده , , Chen and Ichinose، نويسنده , , Hideki، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    353
  • To page
    356
  • Abstract
    Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane of (C60, C70)/AlN multilayers was studied. (C60, C70)/AlN multilayer films presented incomplete PBG behavior in UV region. C60/AlN multilayers with two pairs of 49 nm-C60 and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region.
  • Keywords
    A. Photonic band gap , E. TMM method , A. AlN , A. Fullerene , A. Multilayer films
  • Journal title
    Solid State Communications
  • Serial Year
    2005
  • Journal title
    Solid State Communications
  • Record number

    1789611