Title of article :
Structure due to indirect exciton in photocurrent spectrum of homoepitaxial diamond film
Author/Authors :
Murayama، نويسنده , , K. and Kodaira، نويسنده , , N. and Makino، نويسنده , , T. and Ogura، نويسنده , , M. and Ri، نويسنده , , S. and Takeuchi، نويسنده , , D. and Yamasaki، نويسنده , , S. and Okushi، نويسنده , , H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
469
To page :
472
Abstract :
Photocurrent spectrum in homoepitaxal diamond film formed by chemical vapor deposition has been measured in the photon energy range 5–6 eV of the vicinity of the indirect band gap. It has been seen that the line shape of the spectrum in the photon energy range lower than 5.6 eV agrees with the fundamental absorption edge spectrum in natural diamond. Structures in the spectrum have been explained from the optical transition due to indirect excitons assisted by TO phonons and indirect band-to-band transition.
Keywords :
A. Diamond , D. Absorption edge , D. Photocurrent , D. Exciton
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1789650
Link To Document :
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