High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

Basic electronic properties of two-dimensional electron gas (2DEG) formed at GaN/AlGaN hetero-interface in large-scale (100 mm) wafer made by metal organic chemical vapour deposition (MOCVD) have been reported and discussed. From conventional Hall measurements, highest electron mobility was found to be μe∼1680 and 9000 cm2/V s at room temperature and at ∼5 K, respectively, for sheet electron density of ns∼8×1012 cm−2. In magneto-resistance (MR) measurements carried out at 1.5 K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (Rxx) and off-diagonal (Rxy) resistances, respectively. In addition, a good insulating nature of GaN layer is confirmed by capacitance–voltage (C–V) measurement. These results suggest the high-qualitiness of our 100 mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported.