Electrical properties of high Curie temperature (1−x)Pb(In1/2Nb1/2)O3–xPbTiO3 single crystals grown by the solution Bridgman technique

0.65Pb(In1/2Nb1/2)O3–0.35PbTiO3 (PINT65/35) (starting composition) single crystals were grown successfully through the solution Bridgman technique using PbO flux and PMNT67/33 seed crystals. Because of the composition variation, the final composition of achievable crystals is in a range of 0.32–0.34 with the corresponding Tc range of 265–269 °C. The (001) plates of as-grown PINT66/34 single crystals show high Curie temperature (Tc=269 °C) and rhombohedral–tetragonal phase transition temperature (Trt=134 °C). Besides, good electrical properties with high dielectric constant (ε>3000), low dielectric loss (tan δ∼1.2%), high piezoelectric constant (d33∼2000 pC/N) and large electromechanical coupling factor (kt≈59%) at room temperature have been obtained on the (001) plates. The sound velocity, acoustic impedance and other piezoelectric parameters were also measured on the (001) plates in this study, which provide us more detailed information about PINT66/34 single crystals.