Title of article :
A molecular dynamics study of boron and nitrogen in diamond
Author/Authors :
Li، نويسنده , , Rongbin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
3
From page :
155
To page :
157
Abstract :
Based upon molecular dynamics simulation via the Tersoff many-body potential, we proposed the co-doping method for fabricating n-type diamond. We calculated the optimal co-doping configurations of n-type (nitrogen) and p-type (boron) dopants, the stable structure of a boron atom in diamond is associated with four nitrogen atoms placed at the nearest neighbour positions, the total energy of the system with the stable structure is 136 MeV lower than that of the system with the nitrogen atoms placed in others positions. The results indicated that the co-dopants of nitrogen and boron were the perfect candidates to make n-type diamond, and additional boron would increase the solubility limit of nitrogen in diamond, reduce the lattice-relaxation energy of crystal and improve its doping efficiency in diamond.
Keywords :
E. Tersoff potential , D. Co-doping , A. Diamond
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1790000
Link To Document :
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