Title of article :
On the possibility of a phonon mediated transport anomaly in MgB2 under compression
Author/Authors :
Garg، نويسنده , , Alka B. and Verma، نويسنده , , A.K. and Modak، نويسنده , , P. and Gaitonde، نويسنده , , D.M. and Rao، نويسنده , , R.S. and Vijayakumar، نويسنده , , V. and Godwal، نويسنده , , B.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
285
To page :
289
Abstract :
Results of electrical resistance measurements on MgB2 at ambient temperature up to 25 GPa are presented. An abrupt reduction of nearly 30% in resistance around 18 GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E2g phonon mode reveal that one of the closed Fermi sheets corresponding to the σ-band opens along the Γ–A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).
Keywords :
D. ETT , E. High pressure , A. MgB2 , A. DAC , D. electrical resistance
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1790063
Link To Document :
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