Author/Authors :
Yin، نويسنده , , Zhigang and Chen، نويسنده , , Nuofu and Yang، نويسنده , , Fei and Song، نويسنده , , Shulin and Chai، نويسنده , , Chunlin and Zhong، نويسنده , , Jun and Qian، نويسنده , , Haijie and Ibrahim، نويسنده , , Kurash، نويسنده ,
Abstract :
Nickel-doped ZnO (Zn1−xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni has a chemical valence of 2+. According to the magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at ∼2 eV below the Fermi energy EF, which is of Ni 3d origin. No emission was found at EF, suggesting the insulating nature of the film.
