Title of article
Enhancement of the upper critical field of MgB2 by carbon-doping
Author/Authors
Huang، نويسنده , , Xiaosheng and Mickelson، نويسنده , , William and Regan، نويسنده , , B.Christopher and Zettl، نويسنده , , Alex، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
278
To page
282
Abstract
We have measured the temperature dependence of the upper critical field, Hc2(T), of carbon-doped MgB2. Hc2(T) does not follow the well-known Werthamer–Helfand–Hohenberg (WHH) result for a one-gap dirty superconductor but can be described well by the result of a recent theoretical calculation for a two-gap dirty superconductor. Hc2(0) of the carbon-doped material is determined to be between 29 and 38 T, substantially higher than that of pure MgB2 (15–23 T).
Keywords
D. Upper critical field , A. MgB2
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1790282
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