Author/Authors :
Li، نويسنده , , Chengbin and Feng، نويسنده , , Donghai and Jia، نويسنده , , Tianqing and Sun، نويسنده , , Haiyi and Li، نويسنده , , Xiaoxi and Xu، نويسنده , , Shizhen and Wang، نويسنده , , Xiaofeng and Xu، نويسنده , , Zhizhan، نويسنده ,
Abstract :
The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps.
Keywords :
A. ZnO thin film , E. Electron energy loss rate , E. Time-resolved optical measurement , B. Laser processing
