Title of article :
Mechanism of formation of highly conductive layer on ZnO crystal surface
Author/Authors :
Markevich، نويسنده , , I.V. and Kushnirenko، نويسنده , , V.I. and Borkovska، نويسنده , , L.V. and Bulakh، نويسنده , , B.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
The mechanism of formation of a thin highly conductive layer, which is known to be present on ZnO surface, has been proposed. This process has been assumed to consist in accumulation of mobile shallow donors at crystal surface due to their drift in band-bending electric field caused by adsorbed oxygen. Experimental results that confirm this mechanism have been obtained.
Keywords :
A. Semiconductors , C. Point defects , D. Diffusion in solids , D. Surface conductivity
Journal title :
Solid State Communications
Journal title :
Solid State Communications
