Title of article :
A new Yb-doped oxyorthosilicate laser crystal: Yb:Gd2SiO5
Author/Authors :
Yan، نويسنده , , Chengfeng and Zhao، نويسنده , , Guangjun and Zhang، نويسنده , , Lianhan and Xu، نويسنده , , Jun and Liang، نويسنده , , Xiaoying and Juan، نويسنده , , Du and Li، نويسنده , , Wenxue and Pan، نويسنده , , Haifeng and Ding، نويسنده , , Liangen and Zeng، نويسنده , , Heping، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
451
To page :
455
Abstract :
A new Yb-doped oxyorthosilicate laser crystal, Yb:Gd2SiO5 (Yb:GSO), has been grown by the Czochralski (Cz) method. The crystal structure was determined by means of X-ray diffraction analysis. Room temperature absorption and fluorescence spectra of Yb3+ ions in GSO crystal were measured. Then, spectroscopic parameters of Yb:GSO were calculated and compared with those of another Yb-doped oxyorthosilicate crystal Yb:YSO. Results indicated that Yb:GSO crystal seemed to be a very promising laser gain media in generating ultra-pulses and tunable solid state laser applications. As expected, the output power of 2.72 W at 1089 nm was achieved in Yb:GSO crystal with absorbed power of only 4.22 W at 976 nm, corresponding to the slope efficiency of 71.2% through the preliminary laser experiment.
Keywords :
A. Yb:Gd2SiO5 , D. Laser , B. Czochralski method , C. Crystal structure , D. Absorption spectra , D. Fluorescence spectra
Journal title :
Solid State Communications
Serial Year :
2006
Journal title :
Solid State Communications
Record number :
1790517
Link To Document :
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