Author/Authors :
Jin، نويسنده , , Su B. and Lee، نويسنده , , Joon S. and Choi، نويسنده , , Yoon S. and Choi، نويسنده , , In S. and Han، نويسنده , , Jeon G. and Hori، نويسنده , , M.، نويسنده ,
Abstract :
Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (∼80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of the resulting a-SiOxCyNz film. The a-SiOxCyNz films were deposited at a high deposition rate and low water WVTR properties as a result of the high ion flux and nitrogen chemistry. The high ion flux modified the chemical structure and nitrogen atomic composition of the resulting a-SiOxCyNz film coatings. The substrate temperature was characterized using a thermometer. In addition, the coating properties were characterized by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and the water vapor transmission rate (WVTR).
Keywords :
Gas barrier , low temperature , Nitrogen flow rate , SiOxCyNz
